FZ1600R12KF4 IGBT MODULE SIEMENS S7-200 FD401R17KF6CB2NOSA1 IGBT MOD 1700V 650A

FD401R17KF6CB2NOSA1 IGBT MOD 1700V 650A 3150W

1 change-over contact Screw terminal 24 V DC Enclosure width 6

800MM 1 NO EACH

up to SIL 3 (IEC 61508)

two-wire system

FZ1600R12KF4 IGBT MODULE SIEMENS S7-200 FD401R17KF6CB2NOSA1 IGBT MOD 1700V 650AFZ1600R12KF4 IGBT MODULE Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Dual Common Emitter Common Gate Collector Emitter Voltage VCEO Max: 1200 V Collector Emitter Saturation Voltage: 2. 7 V Continuous Collector Current at 25 C: 1600 A Gate Emitter Leakage Current: 400 nA Pd Power Dissipation: 10 kW Minimum Operating Temperature: 40 C Maximum Operating Temperature: + 150 C Height: 38 mm Length: 140